Reactive ion etching induced damage in GaAs and AlGaAs using C2H6/H2/Ar or CCl2F2/O2 gas mixtures
- 1 September 1989
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (5) , 2061-2064
- https://doi.org/10.1063/1.344296
Abstract
Changes in the near‐surface electrical properties of n‐type (n=1×1017 cm−3) GaAs and AlGaAs after reactive ion etching in C2H6/H2/Ar or CCl2F2/O2 discharges (4 mTorr, 0.85 W cm−2) were investigated by current‐voltage (I‐V) and capacitance‐voltage measurements on Schottky diodes. Carrier reductions of approximately an order of magnitude were observed immediately after etching GaAs and AlGaAs in ethane‐hydrogen‐argon; much smaller changes (∼20%) were observed using freon‐12–oxygen. For both gas chemistries, annealing in the range 200–300 °C produced the most ideal I‐V characteristics in GaAs, whereas 300–400 °C was required for AlGaAs. Replacing H2 by D2 allowed high sensitivity atomic profiling using secondary ion mass spectrometry. Permeation of D2 to depths of ∼0.5 μm is observed in both GaAs and AlGaAs after etching—the D2 diffuses rapidly around 400 °C where dopant reactivation occurs.This publication has 23 references indexed in Scilit:
- Fabrication and characterization of one- and zero-dimensional electron systemsJournal of Vacuum Science & Technology B, 1988
- 3-mm double-heterojunction microwave power HEMT fabricated by selective RIEIEEE Electron Device Letters, 1988
- Selective reactive ion etching of GaAs on AlGaAs using CCl2F2 and HeJournal of Vacuum Science & Technology B, 1988
- Reactive ion etch process with highly controllable GaAs-to-AlGaAs selectivity using SF6 and SiCl4Applied Physics Letters, 1987
- An analytical study of etch and etch-stop reactions for GaAs on AlGaAs in CCl2F2 plasmaJournal of Applied Physics, 1987
- Highly selective reactive ion etching applied to the fabrication of low-noise AlGaAs GaAs FET'sIEEE Transactions on Electron Devices, 1986
- Reactive ion etching of GaAs in CCl4/H2 and CCl4/O2Journal of Applied Physics, 1984
- Reactive ion etching of GaAs and InP using SiCl4Journal of Vacuum Science & Technology B, 1983
- Selective Dry Etching of AlGaAs-GaAs HeterojunctionJapanese Journal of Applied Physics, 1981
- Reactive-ion etching of GaAs and InP using CCl2F2/Ar/O2Applied Physics Letters, 1980