Solutions of Simultaneous Equations for Oxidation Enhanced and Retarded Diffusions and Oxidation Stacking Fault in Silicon

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Abstract
Equations for oxidation enhanced and retarded diffusions (OED and ORD) and oxidation stacking faults (OSF) in silicon have been solved simultaneously, using experimental results at 1100°C for 1.0×104-2.4×105 s. A simple relation between the concentrations of self-interstitials and vacancies was assumed in order to obtain the solutions. It is concluded that the product of the concentrations of the self-interstitials and vacancies, C I C V, is nearly equal to the value for thermal equilibrium, C I 0 C V 0, and that the fractional components of the interstitialcy mechanism for self-, Sb and P diffusions are smaller than 0.5, smaller than 0.5 and larger than 0.5, respectively. This shows that the growth of OSF is caused mainly by the undersaturation of a vacancy, and that the ORD of Sb and the OED of P occur. The time dependences of the supersaturation ratios of the self-interstitials and vacancies were also obtained.