Three-terminal operation of the double-heterostructure optoelectronic switching laser
- 24 June 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (25) , 2957-2959
- https://doi.org/10.1063/1.104707
Abstract
The double‐heterostructure optoelectronic switch is demonstrated as a three‐terminal laser. The basic laser structure employs a graded index single quantum well (GRIN SQW) and implements the third‐terminal injector as a self‐aligned implant to the inversion channel. The implant simultaneously serves as the optical confining layer. Threshold currents of 500 A/cm2 are obtained and complete control of the switching characteristic is obtained with an input current density of 0.8 A/cm2.Keywords
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