Type II heterojunctions in an InGaAsSb/GaSb system: Magnetotransport properties
- 1 March 2001
- journal article
- Published by Pleiades Publishing Ltd in Semiconductors
- Vol. 35 (3) , 331-337
- https://doi.org/10.1134/1.1356157
Abstract
Magnetotransport properties of the narrow-gap InxGa1−xAsySb1−y/GaSb heterojunctions grown by liquid-phase epitaxy with various In content in the solid solution (x=0.85–0.95 and Eg≤0.4 eV) were studied. It is shown that, depending on the In content in these heterostructures, type II staggered-lineup (x=0.85) or broken-gap heterojunctions (x=0.95) with high mobility in the electron channel at the interface (μ⋍20000 cm2/(V s)) can be realized. For x=0.92, depending on temperature, both types of heterojunctions were observed. Obtained results are in good agreement with the band energy diagram of the type II InGaAsSb/GaSb heterostructures under study.Keywords
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