20 Gbit/s monolithic photoreceiver consisting ofa waveguide pin photodiode and HEMT distributed amplifier
- 28 August 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (18) , 1576-1577
- https://doi.org/10.1049/el:19971015
Abstract
A monolithic photoreceiver OEIC for λ = 1.55 µm consisting of a waveguide pin photodiode and an InAlAs/InGaAs HEMT distributed amplifier has been fabricated using a single-step MOVPE growth technique. It has a 3 dB-down frequency of 20 GHz and operates at 20 Gbit/s with a sensitivity of –10.4 dBm.Keywords
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