Mechanism of the Preferential Edge-Positioning of Self-Organized Ge Quantum Dots on Si Mesas

This publication has 16 references indexed in Scilit:

• Alignment of Ge three-dimensional islands on faceted Si(001) surfaces
  Thin Solid Films, 1998
• Lithographic positioning of self-assembled Ge islands on Si(001)
  Applied Physics Letters, 1997
• Contactless electroreflectance study of a vertically coupled quantum dot-based InAs/GaAs laser structure
  Applied Physics Letters, 1997
• Dislocation patterning — a new tool for spatial manipulation of Ge islands
  Thin Solid Films, 1997
• Interfacet mass transport and facet evolution in selective epitaxial growth of Si by gas source molecular beam epitaxy
  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
• Island Scaling in Strained Heteroepitaxy: InAs/GaAs(001)
  Physical Review Letters, 1995
• Growth of semiconductor heterostructures on patterned substrates: defect reduction and nanostructures
  Thin Solid Films, 1993
• Clustering on surfaces
  Surface Science Reports, 1992
• Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)
  Applied Physics Letters, 1990
• Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
  Physical Review Letters, 1990