Stresses from solid state reactions: a simple model, silicides
- 1 May 1992
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 213 (1) , 34-39
- https://doi.org/10.1016/0040-6090(92)90471-m
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- I n s i t u strain measurements during the formation of platinum silicide filmsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- A Model for stress generation and relief in oxide ? Metal systems during a temperature changeOxidation of Metals, 1989
- I n s i t u stress measurements during thermal oxidation of siliconJournal of Vacuum Science & Technology B, 1989
- Semiconductor interlevel shorts caused by hillock formation in Al-Cu metallizationIEEE Transactions on Components, Hybrids, and Manufacturing Technology, 1989
- Reacted amorphous layers: Tantalum and niobium oxidesPhilosophical Magazine Part B, 1988
- Modelling of silicon oxidation based on stress relaxationPhilosophical Magazine Part B, 1987
- Kinetics of formation of silicides: A reviewJournal of Materials Research, 1986
- Reaction of Mo Thin Films on Si (100) SurfacesJournal of the Electrochemical Society, 1980
- A Model for Boundary Diffusion Controlled Creep in Polycrystalline MaterialsJournal of Applied Physics, 1963
- Diffusional Viscosity of a Polycrystalline SolidJournal of Applied Physics, 1950