Semiconductor interlevel shorts caused by hillock formation in Al-Cu metallization
- 1 January 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Components, Hybrids, and Manufacturing Technology
- Vol. 12 (4) , 619-626
- https://doi.org/10.1109/33.49025
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Redistribution phenomena in aluminum alloy/titanium thin filmsJournal of Vacuum Science & Technology A, 1989
- Contact metallurgy development for VLSI logicIBM Journal of Research and Development, 1987
- Effects of oxygen on the growth of vapor-deposited aluminium filmsJournal of Vacuum Science & Technology A, 1986
- Stress relaxation in thin aluminium filmsThin Solid Films, 1985
- A method for eliminating hillocks in integrated-circuit metallizationsJournal of Vacuum Science & Technology B, 1984
- Influence of Cu as an impurity in Al/Ti and Al/W thin-film reactionsApplied Physics Letters, 1983
- Multi-level metallurgy for master image structured logicPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1983
- Stress relaxation and hillock growth in thin filmsActa Metallurgica, 1982
- Copper distribution in sputtered Al/Cu filmsJournal of Vacuum Science and Technology, 1980
- Constitutive Relations for the Nonelastic Deformation of MetalsJournal of Engineering Materials and Technology, 1976