Ultraviolet and blue holographic lithography of ZnSe epilayers and heterostructures with feature size to 100 nm and below
- 17 December 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (25) , 2641-2643
- https://doi.org/10.1063/1.103810
Abstract
We have employed short‐wavelength holographic laser lithography and reactive ion etching to define wire and dot‐like patterns in ZnSe thin epitaxial films and heterostructures with spatial feature size to better than 100 nm. Photoluminescence measurements suggest that surface damage from etching may be much less severe than in III‐V semiconductors.Keywords
This publication has 6 references indexed in Scilit:
- Band offsets and exciton confinement in Zn1−yCdySe/Zn1−xMnxSe quantum wellsApplied Physics Letters, 1990
- Homoepitaxial growth of ZnSe on dry-etched substratesApplied Physics Letters, 1989
- Etching and cathodoluminescence studies of ZnSeApplied Physics Letters, 1988
- Optical technique for producing 0.1-μ periodic surface structuresApplied Physics Letters, 1973
- p-type conduction in undoped ZnSeApplied Physics Letters, 1973
- Time-of-Flight Mobility and Trapping Results for ZnSeApplied Physics Letters, 1972