Hot carrier induced interface trap annealing in silicon field effect transistors

This publication has 25 references indexed in Scilit:

• Physical characterization of hot-electron-induced MOSFET degradation through an improved approach to the charge-pumping technique
  IEEE Transactions on Electron Devices, 1992
• Direct observation of interfacial point defects generated by channel hot hole injection in n-channel metal oxide silicon field effect transistors
  Applied Physics Letters, 1991
• Field dependence of interface-trap buildup in polysilicon and metal gate MOS devices
  IEEE Transactions on Nuclear Science, 1990
• Interface trap formation via the two-stage H/sup +/ process
  IEEE Transactions on Nuclear Science, 1989
• A cross section of hot-carrier phenomena in MOS ULSI's
  Applied Surface Science, 1989
• Hot carrier degradation of n-channel MOSFETs characterized by a gated-diode measurement technique
  IEEE Electron Device Letters, 1989
• Trapped-electron and generated interface-trap effects in hot-electron-induced MOSFET degradation
  IEEE Transactions on Electron Devices, 1987
• Hot-electron and hole-emission effects in short n-channel MOSFET's
  IEEE Transactions on Electron Devices, 1985
• Positive and negative charge generation by hot carriers in n -MOSFETs
  Electronics Letters, 1983
• Hot-electron emission in N-channel IGFET's
  IEEE Transactions on Electron Devices, 1979