Buried SiC Layers in (100) Bulk Silicon and Silicon-on-Sapphire Produced by Carbon Ion Implantation
- 1 January 1985
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Heteroepitaxial silicon characterization: Microstructure as related to UV reflectometryJournal of Crystal Growth, 1983
- Ion-beam induced epitaxy of siliconPhysics Letters A, 1979
- Critical channeling angles of low energy ions in siliconRadiation Effects, 1976
- FORMATION OF SiC IN SILICON BY ION IMPLANTATIONApplied Physics Letters, 1971