Investigation of Se-doped GaSb epilayers grown by low pressure metal-organic chemical vapor deposition
- 31 December 1993
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 36 (12) , 1773-1778
- https://doi.org/10.1016/0038-1101(93)90225-f
Abstract
No abstract availableKeywords
This publication has 31 references indexed in Scilit:
- InGaSbAs injection lasersIEEE Journal of Quantum Electronics, 1987
- Reduction of threshold current density of 2.2μm GaInAsSb/AlGaAsSb injection lasersElectronics Letters, 1986
- p-n junction formation in InSb and InAs1−xSbx by metalorganic chemical vapor depositionApplied Physics Letters, 1985
- Theoretical study of long-wavelength laser operation in Ga1−xAlxAsySb1−yJournal of Applied Physics, 1984
- Electrical and Optical Studies in Gallium AntimonideJapanese Journal of Applied Physics, 1981
- The GaAlAsSb quaternary and GaAlSb ternary alloys and their application to infrared detectorsIEEE Journal of Quantum Electronics, 1981
- Ga1-xAlxSb avalanche photodiodes: Resonant impact ionization with very high ratio of ionization coefficientsIEEE Journal of Quantum Electronics, 1981
- The liquid-phase epitaxial growth of low net donor concentration (5 × 1014-5 × 1015/cm3) GaSb for detector applications in the 1.3 - 1.6 µm regionIEEE Journal of Quantum Electronics, 1981
- Three-level oscillator: a new form of transferred-electron deviceElectronics Letters, 1970
- Ion-pairing between lithium and the residual acceptors in GaSbJournal of Physics and Chemistry of Solids, 1965