High performance AlyGa1−yAs-GaAs-lrxGa1−xAs quantum well lasers defined by silicon-oxygen impurity-induced layer disordering
- 1 January 1990
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 19 (1) , 59-66
- https://doi.org/10.1007/bf02655552
Abstract
No abstract availableKeywords
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