Surface-state generation on MOS capacitors irradiated with UV light and electrons
- 16 August 1976
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 36 (2) , 679-686
- https://doi.org/10.1002/pssa.2210360228
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Illumination with Ultraviolet Light of MOS CapacitorsPhysica Status Solidi (a), 1974
- Photoemission studies at RT of X-irradiated MOS structuresPhysica Status Solidi (a), 1972
- Vacuum Ultraviolet Radiation Effects in SiO2IEEE Transactions on Nuclear Science, 1971
- Photoresponses of MOS transistorProceedings of the IEEE, 1971
- Evolution de la distribution des etats d'interface dans des structures mos irradiees aux electrons et soumises a l'effet d'un traitement thermique sous champSolid State Communications, 1970
- Distribution energetique des etats de surface a l'interface effet de differents traitementsSolid State Communications, 1970
- Interface Barrier Energy Determination from Voltage Dependence of Photoinjected CurrentsJournal of Applied Physics, 1970
- Characteristics of Fast Surface States Associated with SiO[sub 2]-Si and Si[sub 3]N[sub 4]-SiO[sub 2]-Si StructuresJournal of the Electrochemical Society, 1969
- Effects of ionizing radiation on oxidized silicon surfaces and planar devicesProceedings of the IEEE, 1967
- Irradiation of MIS Capacitors with High Energy ElectronsIEEE Transactions on Nuclear Science, 1966