The Effects of Hot Ion-Implantation on the Electrical Properties of Amorphous-Silicon Films Produced by Chemical-Vapor-Deposition Method
- 1 December 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (12B) , L2077
- https://doi.org/10.1143/jjap.30.l2077
Abstract
Hot ion-implantation into amorphous silicon (a-Si) has been studied for chemical-vapor-deposited films. Conductivity of as high as 0.4 S/cm (100 times higher than the previous result) was achieved at the phosphorus atom concentration of 8×1020 cm-3, when the substrate temperature was elevated up to 450°C during the ion-implantation. Activation energy was 0.12 eV.Keywords
This publication has 11 references indexed in Scilit:
- Hydrogen-Radical Annealing of Chemical Vapor-Deposited Amorphous Silicon FilmsJapanese Journal of Applied Physics, 1990
- Optimization of Chemical Vapor Deposition Conditions of Amorphous-Silicon Films for Thin-Film Transistor ApplicationJapanese Journal of Applied Physics, 1990
- Thermal-CVD Produced Amorphous-Silicon Thin-Film Transistors-Ambipolar CharacteristicsMRS Proceedings, 1990
- Self-alignment a-Si FET by using a lift-off techniqueElectronics Letters, 1985
- Preparation of amorphous silicon films by chemical vapor deposition from higher silanes SinH2n+2(n≳1)Applied Physics Letters, 1981
- The effects of ion implantation on the electrical properties of amorphous siliconPhilosophical Magazine Part B, 1980
- Photo and dark conductivity of doped amorphous siliconPhysica Status Solidi (b), 1977
- Electronic properties of substitutionally doped amorphous Si and GePhilosophical Magazine, 1976
- Substitutional doping of amorphous siliconSolid State Communications, 1975
- Secondary defects in phosphorus-implanted siliconApplied Physics Letters, 1973