Breakdown voltage in LDMOS transistors using internal field rings
- 1 July 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (7) , 1676-1680
- https://doi.org/10.1109/16.85166
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- High-voltage multiple-resistivity drift-region LDMOSSolid-State Electronics, 1986
- LDMOS transistors with implanted and deposited surface layersIEE Proceedings I Solid State and Electron Devices, 1985
- Relation between oxide thickness and the breakdown voltage of a planar junction with field relief electrodeIEEE Transactions on Electron Devices, 1979
- Deep-depletion breakdown voltage of silicon-dioxide/silicon MOS capacitorsIEEE Transactions on Electron Devices, 1979
- High voltage thin layer devices (RESURF devices)Published by Institute of Electrical and Electronics Engineers (IEEE) ,1979
- The breakdown voltage of double-sided p-n junctionsIEEE Transactions on Electron Devices, 1974