A low-parasitic collector construction for high-speed SiGe:C HBTs
- 19 April 2005
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- SiGe bipolar technology for automotive radar applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004
- SiGe:C BiCMOS technology with 3.6 ps gate delayPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004
- A complementary BiCMOS technology with high speed npn and pnp SiGe:C HBTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004
- 3.9 ps SiGe HBT ECL ring oscillator and transistor design for minimum gate delayIEEE Electron Device Letters, 2003