Effect of valence-band anisotropy and nonparabolicity on total scattering rates for holes in nonpolar semiconductors

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Abstract
We investigate theoretically the effect of the warped and nonparabolic valence-band structure on the total scattering rates for holes in cubic semiconductors with diamond lattices using the multiband effective-mass theory. All numerical calculations are done for silicon and include ionized-impurity scattering, optical-, and acoustical-phonon scattering. We find that the anisotropy and nonparabolicity of the valence bands result in a considerable dependence of the total scattering rates on the incident direction of the hole wave vector.