High-performance back-illuminated solar-blind AlGaNmetal-semiconductor-metal photodetectors
- 26 October 2000
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 36 (22) , 1866-1867
- https://doi.org/10.1049/el:20001301
Abstract
The fabrication and characterisation of back-illuminated solar blind AlGaN metal-semiconductor-metal photodetectors is reported. The dark current of 40 × 40 µm devices is lower than the instrument measurement limitation of 20 fA for a bias < 100 V. The external quantum efficiency is as high as 48% and the spectral response shows a sharp band edge drop-off at ~280 nm.Keywords
This publication has 8 references indexed in Scilit:
- Back illuminated AlGaN solar-blind photodetectorsApplied Physics Letters, 2000
- Solar-blind AlGaN-based inverted heterostructure photodiodesApplied Physics Letters, 2000
- Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n PhotodiodesJapanese Journal of Applied Physics, 2000
- Solar-blind AlGaN photodiodes with very low cutoff wavelengthApplied Physics Letters, 2000
- High-performance (Al,Ga)N-based solar-blind ultraviolet p–i–n detectors on laterally epitaxially overgrown GaNApplied Physics Letters, 1999
- Improved detection of the invisibleIEEE Circuits and Devices Magazine, 1999
- Schottky barrier photodetectors based on AlGaNApplied Physics Letters, 1998
- Semiconductor ultraviolet detectorsJournal of Applied Physics, 1996