Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes
- 1 May 2000
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 39 (5A) , L387
- https://doi.org/10.1143/jjap.39.l387
Abstract
We report on the fabrication and characterization of n-Al0.44Ga0.56N/i-Al0.44Ga0.56N/p-GaN ultraviolet solar-blind photodetectors. The diodes were fabricated by organometallic vapor phase epitaxy on low-defect-density AlGaN layers using a low-temperature interlayer technique. They present a long cutoff wavelength at 270 nm with high rejection of solar light and a responsivity of 12 mA/W. Low dark currents between 4 and 35 pA/mm2 at -5 V have been measured. A photocurrent decay time of 14 µs has been estimated in unbiased diodes. Due to the large dynamic resistance of the diode at 0 V bias, the detector itself shows a detectivity of 1.2×1013 cm·Hz1/2·W-1.Keywords
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