Improved detection of the invisible
- 1 January 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Circuits and Devices Magazine
- Vol. 15 (5) , 15-24
- https://doi.org/10.1109/101.795089
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Very high-speed ultraviolet photodetectors fabricated on GaNJournal of Electronic Materials, 1999
- Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substratesApplied Physics Letters, 1998
- Low dark current pin ultraviolet photodetectorsfabricated on GaN grown bymetal organic chemical vapour depositionElectronics Letters, 1998
- Performance of thin separate absorption, charge, and multiplication avalanche photodiodesIEEE Journal of Quantum Electronics, 1998
- Wurtzite GaN-based heterostructures by molecular beam epitaxyIEEE Journal of Selected Topics in Quantum Electronics, 1998
- Semiconductor ultraviolet detectorsJournal of Applied Physics, 1996
- Electric breakdown in GaN p-n junctionsApplied Physics Letters, 1996
- High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayersApplied Physics Letters, 1992
- Multiplication noise of wide-bandwidth InP/InGaAsP/InGaAs avalanche photodiodesJournal of Lightwave Technology, 1989
- Theory of Microplasma Instability in SiliconJournal of Applied Physics, 1961