Low pressure chemical vapor deposition of oxide from SiH4/O2: Chemistry and effects on electrical properties
- 13 January 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (2) , 198-200
- https://doi.org/10.1063/1.106962
Abstract
The low pressure chemical vapor deposition (CVD) process of SiO2 from SiH4 and O2 has been analyzed. For deposition at pressures ranging from 10−3 to 3 Torr, with no carrier gas, the process is dominated by fast gas-phase reactions. In situ analytical techniques, such as mass spectrometry and high-resolution electron energy loss spectroscopy, indicate that hydroxyl groups are reaction products and are imbedded into the growing oxide at temperatures from 300 to 600 °C. Presence of these groups is detrimental to the electrical properties of metal-oxide-semiconductor (MOS) structures, e.g., by causing low-field breakdown and by increasing the interface state density. Low-pressure (SiH4/O2) oxides are thus principally not well suited for gate-oxide applications because of their underlying chemistry.Keywords
This publication has 14 references indexed in Scilit:
- Integrated thermal chemical vapor deposition processing for Si technologyJournal of Vacuum Science & Technology A, 1990
- Equilibrium surface hydrogen coverage during silicon epitaxy using SiH4Journal of Vacuum Science & Technology A, 1990
- Kinetics of silicon epitaxy using SiH4 in a rapid thermal chemical vapor deposition reactorApplied Physics Letters, 1990
- Laser-induced fluorescence of OH and SiO molecules during thermal chemical vapour deposition of SiO2 from silane-oxygen mixturesChemical Physics Letters, 1989
- Low pressure processes in chemical vapour deposition of silicon oxidesJournal of Crystal Growth, 1984
- Efficiency of the SiH4 oxidation reaction in chemical vapour deposition of SiO2 films at low temperatureThin Solid Films, 1983
- Deposition kinetics of SiO2 filmJournal of Applied Physics, 1981
- Gas Phase Composition in the Low Pressure Chemical Vapor Deposition of Silicon DioxideJournal of the Electrochemical Society, 1980
- Advances in deposition processes for passivation filmsJournal of Vacuum Science and Technology, 1977
- 281. The oxidation of the silicon hydrides. Part IJournal of the Chemical Society, 1935