The growth of epitaxial InP by the chloride process in nitrogen and in the presence of phosphine
- 31 May 1983
- journal article
- other
- Published by Elsevier in Journal of Crystal Growth
- Vol. 61 (3) , 695-697
- https://doi.org/10.1016/0022-0248(83)90201-4
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- The preparation of high purity epitaxial InPSolid State Communications, 1970
- Thermodynamic and Experimental Aspects of Gallium Arsenide Vapor GrowthJournal of the Electrochemical Society, 1970
- Reaction Equilibria in the Growth of GaAs and GaP by the Chloride Transport ProcessJournal of the Electrochemical Society, 1970