A high voltage UMOS transistor
- 1 May 1981
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 24 (5) , 435-443
- https://doi.org/10.1016/0038-1101(81)90042-3
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- A new short channel MOSFET structure (UMOST)Solid-State Electronics, 1977
- Avalanche breakdown in high-voltage D-MOS devicesIEEE Transactions on Electron Devices, 1976
- An experimental and theoretical analysis of double-diffused MOS transistorsIEEE Journal of Solid-State Circuits, 1975
- The Effect of HCl and Cl[sub 2] on the Thermal Oxidation of SiliconJournal of the Electrochemical Society, 1972
- Effect of junction curvature on breakdown voltage in semiconductorsSolid-State Electronics, 1966
- Effective Carrier Mobility in Surface-Space Charge LayersPhysical Review B, 1955