Far-infrared study of confinement effects on acceptors inGaAsAlxGa1−xAsquantum wells

Results of a far-infrared absorption study of beryllium acceptors in $\frac{\mathrm{GaAs}}{{\mathrm{Al}}_x{\mathrm{Ga}}_{1-x}\mathrm{As}}$ quantum wells with widths between 300 and 100 Å, as well as a bulk sample of Be-doped GaAs for comparison, clearly show the effects of confinement on the acceptor. The observed increase in transition energy is in qualitative agreement with recent calculations. The intra-acceptor transition data will provide a useful basis for comparison with calculations of higher excited $p$-like states.