Electrical behavior of Yb ion in p- and n-type InP

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Abstract
In this letter are reported admittance spectroscopy experiments on Yb‐doped p‐ and n‐type InP grown by the synthesis method. The purpose is to give a clear understanding of the rare‐earth ion electrical behavior. In p‐type material, the results indicate the presence of two peaks in the conductance spectra at low temperature. The activation energies of these levels have been found to be 42±5 and 50±5 meV above the valence band. We attribute them to Mg and Yb, respectively. In n‐type material, the conductance spectra present a peak at low temperature with an activation energy of 29±3 meV below the conduction band and we attribute it to Yb ion. To explain the origin of these Yb‐related traps, we propose that this ion acts as an isoelectronic trap in InP.