Time dependence of p-MOSFET hot-carrier degradation measured and interpreted consistently over ten orders of magnitude

This publication has 26 references indexed in Scilit:

• Oxide field and temperature dependences of gate oxide degradation by substrate hot electron injection
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• A new monitor to predict hot-carrier damage of PMOS transistors
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• Hot-carrier current modeling and device degradation in surface-channel p-MOSFETs
  IEEE Transactions on Electron Devices, 1990
• A lifetime prediction method for hot-carrier degradation in surface-channel p-MOS devices
  IEEE Transactions on Electron Devices, 1990
• Trap creation in silicon dioxide produced by hot electrons
  Journal of Applied Physics, 1989
• Suppression of hot-carrier effects in submicrometer surface-channel PMOSFETs
  IEEE Transactions on Electron Devices, 1988
• Hot-carrier drifts in submicrometer p-channel MOSFET's
  IEEE Electron Device Letters, 1987
• Hot-electron-induced punchthrough (HEIP) effect in submicrometer PMOSFET's
  IEEE Transactions on Electron Devices, 1987
• Current induced trap generation in SiO2
  Applied Physics Letters, 1982
• The use of charge pumping currents to measure surface state densities in MOS transistors
  Solid-State Electronics, 1976