Monitoring of SIMOX layer properties and implantation temperature by optical measurements
- 1 October 1987
- journal article
- letter
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 2 (10) , 687-690
- https://doi.org/10.1088/0268-1242/2/10/011
Abstract
Infrared absorption and Raman scattering measurements of SIMOX structures implanted at various temperatures yield information on the structure and the strain in both the top silicon and the buried oxide layers. Both techniques can also be used to monitor the implant temperature after the implantation.Keywords
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