Spectroscopic charge pumping: A new procedure for measuring interface trap distributions on MOS transistors
- 1 January 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (8) , 1820-1831
- https://doi.org/10.1109/16.119021
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- The development and application of a SiSiO2 interface-trap measurement system based on the staircase charge-pumping techniqueSolid-State Electronics, 1989
- The charge pumping method: Experiment and complete simulationJournal of Applied Physics, 1989
- A new charge pumping method of measuring Si-SiO2 interface statesJournal of Applied Physics, 1987
- A model for the charge-pumping current based on small rectangular voltage pulsesSolid-State Electronics, 1986
- Improvements in the determination of interface state density using deep level transient spectroscopyJournal of Applied Physics, 1984
- Temperature and energy dependences of capture cross sections at surface states in Si metal-oxide-semiconductor diodes measured by deep level transient spectroscopyJournal of Applied Physics, 1981
- Electrical characteristics of the SiO2Si interface near midgap and in weak inversionSolid-State Electronics, 1974
- Fast capacitance transient appartus: Application to ZnO and O centers in GaP p-n junctionsJournal of Applied Physics, 1974
- Theory of dynamic charge current and capacitance characteristics in MIS systems containing distributed surface trapsSolid-State Electronics, 1973
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967