Reaction Engineering Modeling of Low-Pressure Metalorganic Chemical Vapor Deposition of Nb2O5 Thin Film
- 1 June 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (6B) , L775
- https://doi.org/10.1143/jjap.34.l775
Abstract
Thin films of niobium oxide (V) were prepared by low-pressure metalorganic chemical vapor deposition (LPMOCVD) from bis-dipivaloylmethanate niobium trichloride in a horizontal tube hot-wall reactor. The dependence of growth rate, crystal orientation, morphology and chemical composition on operating conditions were studied experimentally. The profile of the thin film grown on microscale trenches and the macroscopic growth rate distribution in the reactor were studied by micro/macro-numerical simulations.Keywords
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