CBE growth of GaAs/GaAlAs HBTs using the new DEAlH-NMe3 precursor and all-gaseous dopants
- 1 May 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 120 (1-4) , 245-251
- https://doi.org/10.1016/0022-0248(92)90398-3
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Growth reactions and mechanisms in chemical beam epitaxy (CBE)Journal of Crystal Growth, 1992
- p+/N GaAs-AlGaAs heterostructures grown by gas source MBE using gaseous p- and n-type dopant sourcesJournal of Crystal Growth, 1991
- Gas Source MBE Growth of GaAs/AlGaAs Heterojunction Bipolar Transistor with a Carbon Doped Base Using Only Gaseous SourcesJapanese Journal of Applied Physics, 1991
- Growth mechanism studies in CBE/MOMBEJournal of Crystal Growth, 1991
- Modulated-beam mass spectrometry studies of the MOMBE growth of (100) GaAs and In0.1Ga0.9AsJournal of Crystal Growth, 1990