Deep levels in semiconductors: A quantitative criterion
- 15 April 1982
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 25 (8) , 5515-5518
- https://doi.org/10.1103/physrevb.25.5515
Abstract
The vague current classification of deep levels as not being shallow is replaced by a quantitative criterion. Deep levels, bound by the short-range impurity potential, exhibit pressure coefficients which are about 100 times larger than those of shallow states. Experimental results for chalcogen donors in Si are shown to agree with theoretical predictions.Keywords
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