Electronic states of (001) and (311) AlAs/GaAs quantum wells

The electronic states of (001) and (311) AlAs/GaAs quantum wells at the κ=(0,0), point is studied for 2≤n≤20, n being the number of principal layers of GaAs in the heterostructure. The calculations are performed by using an ${\mathit{sp}}^3$ ${\mathit{s}}^{\mathrm{*}}$ empirical tight-binding model together with the surface Green-function matching method. The evolution of the energy for the different bound states versus the variation of n and the orbital character of the bound states are studied for both (001) and (311) quantum wells.