Electronic structure of (311) AlAs-GaAs superlattices

The electronic structure of (311) AlAs-GaAs superlattices at the Γ point of the superlattice is studied for (2,2)≤(n,m)≤(20,20), where n (m) is the number of principal layers of AlAs (GaAs). The calculations are based on an ${\mathit{sp}}^3$ ${\mathit{s}}^{\mathrm{*}}$ model and on a surface Green-function matching analysis. The evolution of the energy gap versus the variation of n and m and the confinement of the different states are discussed and compared to the case of the (001) AlAs-GaAs superlattices.