Photoluminescence from hydrogenated ion-implanted crystalline silicon
- 15 December 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (12) , 937-939
- https://doi.org/10.1063/1.91012
Abstract
Ion‐implanted crystalline silicon annealed in atomic hydrogen photoluminesces at 0.99±0.01 eV in a band having a spectral width of 0.1 eV FWHM. The emitted spectrum does not depend on the chemical nature of the implanted ion (Al, As, D, F, H, Ne, P, Si); however, when the surface is amorphized, a spectrum characteristic of hydrogenated amorphous Si is obtained.Keywords
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