Electromigration-resistant Cu-Pd alloy films
Open Access
- 1 April 1993
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 226 (2) , 238-247
- https://doi.org/10.1016/0040-6090(93)90385-3
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Activation energy for electromigration in Cu filmsApplied Physics Letters, 1991
- Hydrogen storage, microstructural properties of, and electromigration effects in Al/Pd/Al filmsJournal of Vacuum Science & Technology A, 1991
- Selective electroless copper for VLSI interconnectionIEEE Electron Device Letters, 1989
- A model for conductor failure considering diffusion concurrently with electromigration resulting in a current exponent of 2Journal of Applied Physics, 1986
- Activation energies for the different electromigration mechanisms in aluminumSolid-State Electronics, 1981
- Electromigration in thin aluminum films on titanium nitrideJournal of Applied Physics, 1976
- Activation energy for electrotransport in thin aluminum films by resistance measurementsJournal of Physics and Chemistry of Solids, 1976
- Electrotransport in copper alloy films and the defect mechanism in grain boundary diffusionThin Solid Films, 1975
- RESISTANCE MONITORING AND EFFECTS OF NONADHESION DURING ELECTROMIGRATION IN ALUMINUM FILMSApplied Physics Letters, 1968
- Order-disorder and cold-work phenomena in CuPd alloysActa Metallurgica, 1956