Planar Type p-Channel InSb-MAOSFET
- 1 October 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (10A) , L835-837
- https://doi.org/10.1143/jjap.24.l835
Abstract
Planar type p-channel InSb-MAOSFET is fabricated by anodic oxidation and alumina sputtering for MAOS gate structure, and Be ion implantation for source and drain. An excellent on-off ratio of the order of 105 is obtained in the drain current. Results also indicate that threshold voltage depends on various conditions of the application of gate and drain voltages and that a time dependent response is observed for the drain current.Keywords
This publication has 5 references indexed in Scilit:
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