Temperature dependence of collector breakdown voltage and output conductance in HBT's with AlGaAs, GaAs, InP, and InGaAs collectors
- 9 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 805-808
- https://doi.org/10.1109/iedm.1991.235302
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- 60 Ghz A l InAs/gainas/inp Dhbts Grown by Movpe+mbePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- 4 Gbit/s pin/HBT monolithic photoreceiverElectronics Letters, 1990
- Self-aligned AlInAs-GaInAs heterojunction bipolar transistors and circuitsIEEE Electron Device Letters, 1989
- A high-speed, low-power divide-by-4 frequency divider implemented with AlInAs/GaInAs HBT'sIEEE Electron Device Letters, 1989
- High-gain Al0.48In0.52As/Ga0.53As vertical n-p-n heterojunction bipolar transistors grown by molecular-beam epitaxyIEEE Electron Device Letters, 1983
- Tunneling currents in In0.53Ga0.47As homojunction diodes and design of InGaAs/InP hetero-structure avalanche photodiodesSolid-State Electronics, 1981