Selective area epitaxy of CdTe
- 1 June 1997
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 26 (6) , 511-514
- https://doi.org/10.1007/s11664-997-0186-5
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Monolithic integration of multiple wavelength vertical-cavity surface-emitting lasers by mask molecular beam epitaxyApplied Physics Letters, 1995
- Etch pit characterization of CdTe and CdZnTe substrates for use in mercury cadmium telluride epitaxyJournal of Electronic Materials, 1995
- Selected-area epitaxy of CdTeJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Use of cation-stabilized conditions to improve compatibility of CdTe and HgTe molecular beam epitaxyApplied Physics Letters, 1989
- Molecular beam epitaxy of GaAs/AlGaAs superlattice heterostructures on nonplanar substratesApplied Physics Letters, 1987
- Molecular beam epitaxial writing of patterned GaAs epilayer structuresApplied Physics Letters, 1978
- Selective area growth of GaAs/AlxGa1−xAs multilayer structures with molecular beam epitaxy using Si shadow masksApplied Physics Letters, 1977