Switch-level simulation of total dose effects on CMOS VLSI circuits
- 1 January 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
- Vol. 8 (9) , 933-938
- https://doi.org/10.1109/43.35545
Abstract
The effects of radiation exposure on the performance of CMOS integrated circuits are difficult to predict and to simulate due to the bias-dependent device parameter shifts. Simulation methodologies for identification of failure mechanisms and performance estimation are developed. These simulation algorithms are implemented in the PARA simulator for switch-level simulation of radiation effects. Simulation results for test circuits are presented that prove that accurate estimations are possible without CPU-intensive simulation programsKeywords
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