Low-temperature selective growth of GaAs by alternately supplying molecular beam epitaxy
- 2 February 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 95 (1-4) , 32-34
- https://doi.org/10.1016/0022-0248(89)90344-8
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Selective epitaxial growth of gallium arsenide by molecular beam epitaxyApplied Physics Letters, 1987
- Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1986
- Effect of Thermal Etching on GaAs Substrate in Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1986
- Preferential Desorption of Ga from AlxGa1-xAs Grown by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1984
- Aspects of GaAs Selective Area Growth by Molecular Beam Epitaxy with Patterning by SiO2 MaskingJournal of the Electrochemical Society, 1983
- Toward quantum well wires: Fabrication and optical propertiesApplied Physics Letters, 1982