Preferential Desorption of Ga from AlxGa1-xAs Grown by Molecular Beam Epitaxy
- 1 June 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (6A) , L351
- https://doi.org/10.1143/jjap.23.l351
Abstract
Substrate-temperature dependence of surface and bulk composition of Al x Ga1-x As grown by molecular beam epitaxy has been studied by auger electron spectroscopy and photoluminescence. Ga desorption during epitaxial growth is not negligible at the substrate temperature above 650°C. The surface Ga density of as-grown Al x Ga1-x As is less than that of the bulk due to the Ga desorption after Ga flux is stopped. When the epitaxial wafer is kept at the growth temperature (above 690°C) for a few minutes without Al and Ga fluxes and with As4 flux, the surface is covered with approximately three monolayers of AlAs due to desorption of Ga.Keywords
This publication has 6 references indexed in Scilit:
- Incorporation rates of gallium and aluminum on GaAs during molecular beam epitaxy at high substrate temperaturesJournal of Applied Physics, 1983
- Molecular-beam epitaxial group III arsenide alloys: Effect of substrate temperature on compositionJournal of Applied Physics, 1982
- Photoluminescence of AlxGa1−xAs grown by molecular beam epitaxyJournal of Applied Physics, 1981
- Effect of growth temperature on the photoluminescent spectra from Sn-doped Ga1−xAlxAs grown by molecular beam epitaxyApplied Physics Letters, 1981
- Surface processes controlling the growth of GaxIn1−xAs and GaxIn1−xP alloy films by MBEJournal of Crystal Growth, 1978
- Interdiffusion between GaAs and AlAsApplied Physics Letters, 1976