The role of free carrier absorption in laser annealing of silicon at 1.06μm
- 14 January 1980
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 13 (1) , 39-44
- https://doi.org/10.1088/0022-3727/13/1/013
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- The temperature dependence of the Auger recombination coefficient of undoped siliconJournal of Physics C: Solid State Physics, 1979
- Determination of the temperature dependence of the free carrier and interband absorption in silicon at 1.06μmJournal of Physics C: Solid State Physics, 1979
- Determination of the interband and the free carrier absorption constants in silicon at high-level photoinjectionJournal of Physics D: Applied Physics, 1979
- Measurement of Auger recombination in silicon by laser excitationSolid-State Electronics, 1978
- Determination of the Absorption and the Free Carrier Distribution in Silicon at High Level Photogeneration at 1.06 μm and 294 KPhysica Scripta, 1978
- Time-resolved reflectivity of ion-implanted silicon during laser annealingApplied Physics Letters, 1978
- Band-to-band Auger Recombination in Silicon and GermaniumPhysica Scripta, 1973