Effects of thermal annealing procedure and a strained intermediate layer on a highly-strained GaInNAs/GaAs double-quantum-well structure

This publication has 10 references indexed in Scilit:

• Mechanism analysis of improved GaInNAs optical properties through thermal annealing
  Journal of Crystal Growth, 2000
• High-temperature characteristics of 1.3 μm InGaAsN:Sb/GaAs multiple-quantum-well lasers grown by molecular-beam epitaxy
  Applied Physics Letters, 2000
• A 1.3-µm GaInNAs/GaAs Single-Quantum-Well Laser Diode with a High Characteristic Temperature over 200 K
  Japanese Journal of Applied Physics, 2000
• High-temperature operation up to 170/spl deg/C of GaInNAs-GaAs quantum-well lasers grown by chemical beam epitaxy
  IEEE Photonics Technology Letters, 2000
• 1.3 µm continuous-wave operation of GainNAslasers grown by metal organicchemical vapour deposition
  Electronics Letters, 1999
• Nitrogen incorporation rate, optimal growth temperature, and AsH3-flow rate in GaInNAs growth by gas-source MBE using N-radicals as an N-source
  Journal of Crystal Growth, 1999
• Atomic-Layer Etching of a Br-Saturated Si(111)-7×7 Surface by Using Scanning Tunneling Microscope
  Japanese Journal of Applied Physics, 1999
• GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
  Japanese Journal of Applied Physics, 1996
• Spectral analysis of rainfall induced scintillationson a 4.1 km0.83 µm line-of-sight link over central London
  Electronics Letters, 1995
• Photoluminescence and photoconductivity measurements on band-edge offsets in strained molecular-beam-epitaxy-grown ${\mathrm{In}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{-}\mathrm{x}}$As/GaAs quantum wells
  Physical Review B, 1988