High-temperature characteristics of 1.3 μm InGaAsN:Sb/GaAs multiple-quantum-well lasers grown by molecular-beam epitaxy
- 4 February 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (7) , 795-797
- https://doi.org/10.1063/1.125587
Abstract
1.3 μm InGaAsN:Sb/GaAs multiple-quantum-well laser diodes have been grown by solid-source molecular-beam epitaxy using Sb as a surfactant. A low threshold of 1.1 kA/cm2 was achieved for broad-area laser diodes under pulsed operation at room temperature. High-temperature device characterization revealed characteristic temperatures of 92 and 54 K for operating temperatures below and above 75 °C, respectively, as well as a lasing-wavelength temperature dependence of 0.36 nm/ °C.
Keywords
This publication has 16 references indexed in Scilit:
- Growth of 1.3 μm InGaAsN laser material on GaAs by molecular beam epitaxyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999
- Photoluminescence of as-grown and thermally annealed InGaAsN/GaAs quantum wells grown by molecular beam epitaxyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999
- Gas-source MBE of GaInNAs for long-wavelength laser diodesJournal of Crystal Growth, 1998
- Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GalnNAs/GaAs Single Quantum Well Laser DiodeOptical Review, 1998
- Room-temperature pulsed operationof 1.3 µm GaInNAs/GaAs laser diodeElectronics Letters, 1997
- Room-Temperature Operation of GaInNAs/GaInP Double-Heterostructure Laser Diodes Grown by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1997
- Bipolar/CMOS (weak inversion) rail-to-rail constant-
g
m
input stageElectronics Letters, 1997
- Room-Temperature Pulsed Operation of GaInNAs Laser Diodes with Excellent High-Temperature PerformanceJapanese Journal of Applied Physics, 1996
- GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature PerformanceJapanese Journal of Applied Physics, 1996
- High-performance uncooled 1.3-μm Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP strained-layer quantum-well lasers for subscriber loop applicationsIEEE Journal of Quantum Electronics, 1994