Heavy carbon doping of GaAs grown by solid-source molecular-beam epitaxy
- 13 July 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (2) , 183-185
- https://doi.org/10.1063/1.108212
Abstract
We study the incorporation of carbon in GaAs at doping levels beyond 1019 cm−3 grown by conventional solid‐source molecular‐beam epitaxy. The correlation of Hall effect measurements at 77 and 300 K and of double crystal x‐ray diffractometry allows us to determine the fraction of carbon incorporated on As sites acting as acceptors. These experiments reveal the onset of compensation at the highest doping levels of 5×1019 cm−3.Keywords
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