Direct writing of submicron Au-lines on GaAs in an electrolyte
- 1 November 1990
- journal article
- Published by Taylor & Francis in International Journal of Electronics
- Vol. 69 (5) , 631-634
- https://doi.org/10.1080/00207219008920348
Abstract
With a simple set-up using a glass-insulated tungsten tip dipped into an electrolyte (as is typical for scanning tunnelling microscopy) we succeeded in writing Au-lines on n-GaAs by application of 1 ms voltage pulses. So far, the smallest lines measured 250 nm in width and 80 nm in height, but these dimensions are expected to be further improved.Keywords
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