The silicon L-edge photoabsorption spectrum of silicon carbide

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Abstract
The authors present the X-ray absorption spectrum of the Si L-edge of SiC in the energy region 90-180 eV. To obtain the absorption spectrum, they have measured reflectivity spectra at several incidence angles using synchrotron radiation. The absorption coefficient for each photon energy has been deduced from the angular dependence of the reflectivity. The spectrum of the index of refraction is obtained as well. They find that the near-edge structure of the absorption spectrum of SiC is consistent with effective potential barriers formed by electronegative carbon atoms that surround silicon atoms tetrahedrally.