Strain and Compositional Analysis of InGaN/GaN Layers

This publication has 11 references indexed in Scilit:

• Characterization of InGaN/GaN heterostructures by means of RBS/channeling
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2000
• X-ray powder diffraction data for indium nitride
  Powder Diffraction, 1999
• Elastic strain in In0.18Ga0.82N layer: A combined x-ray diffraction and Rutherford backscattering/channeling study
  Applied Physics Letters, 1999
• Determination of the chemical composition of distorted InGaN/GaN heterostructures from x-ray diffraction data
  Journal of Physics D: Applied Physics, 1999
• GaN/AIGaN Heterostructure Devices: Photodetectors and Field-Effect Transistors
  MRS Bulletin, 1997
• The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization
  MRS Internet Journal of Nitride Semiconductor Research, 1997
• Structural and Optical Properties of Nitride-Based Heterostructure and Quantum-Well Structure
  MRS Proceedings, 1996
• New Approach in Equilibrium Theory for Strained Layer Relaxation
  Physical Review Letters, 1994
• Algorithms for the rapid simulation of Rutherford backscattering spectra
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
• Die Konstitution der Mischkristalle und die Raumf llung der Atome
  The European Physical Journal A, 1921