Surface structure of Si(001) treated by hydrogen and argon electron cyclotron resonance plasmas
- 1 January 1992
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 62 (1-2) , 67-75
- https://doi.org/10.1016/0169-4332(92)90195-4
Abstract
No abstract availableKeywords
This publication has 27 references indexed in Scilit:
- 370 °C clean for Si molecular beam epitaxy using a HF dipApplied Physics Letters, 1991
- Existence of threshold density in silicon surface cleaning using hydrogen electron cyclotron resonance plasmaApplied Physics Letters, 1991
- Properties of silicon surface cleaned by hydrogen plasmaApplied Physics Letters, 1991
- Hydrogen plasma treatment: desorption of atomic hydrogen from silicon surfaces studied by in-situ spectroscopic ellipsometryPhysica B: Condensed Matter, 1991
- GaAs-oxide removal using an electron cyclotron resonance hydrogen plasmaApplied Physics Letters, 1991
- Coupling of an adsorbate vibration to a substrate surface phonon: H on Si(111)Physical Review Letters, 1990
- Low-Temperature Si Surface Cleaning by Hydrogen Beam with Electron-Cyclotron-Resonance Plasma ExcitationJapanese Journal of Applied Physics, 1990
- Directional etching of Si with perfect selectivity to SiO2 using an ultraclean electron cyclotron resonance plasmaApplied Physics Letters, 1990
- Etching of SiO2 in an electron cyclotron resonance argon plasmaApplied Physics Letters, 1990
- Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphologyJournal of Vacuum Science & Technology A, 1989